JANTXV2N3635
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- Mfr.Part #
- JANTXV2N3635
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A TO39
- Stock
- 16,622
- In Stock ：
- 16,622
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Turn Off Time-Max (toff) :
- 650ns
- Terminal Form :
- Wire
- Operating Temperature :
- -65°C~200°C TJ
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Power Dissipation :
- 1W
- Mount :
- Through Hole
- Pin Count :
- 3
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 140V
- Turn On Time-Max (ton) :
- 200ns
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time :
- 23 Weeks
- Max Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 140V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Series :
- Military, MIL-PRF-19500/357
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Datasheets
- JANTXV2N3635
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N3635L Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1A volts is possible.
JANTXV2N3635L Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JANTXV2N3635L Applications
There are a lot of Microsemi Corporation
JANTXV2N3635L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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