JANTX2N6058
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- Mfr.Part #
- JANTX2N6058
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 12A TO3
- Stock
- 663
- In Stock ：
- 663
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Mounting Type :
- Through Hole
- Terminal Form :
- PIN/PEG
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Max Collector Current :
- 12A
- Power - Max :
- 150W
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Pin Count :
- 2
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Qualified
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 150W
- Package / Case :
- TO-204AA, TO-3
- Collector Emitter Saturation Voltage :
- 3V
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Transistor Type :
- NPN - Darlington
- JESD-30 Code :
- O-MBFM-P2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 1mA
- Factory Lead Time :
- 20 Weeks
- Series :
- Military, MIL-PRF-19500/502
- Mount :
- Through Hole
- Contact Plating :
- Lead, Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- JANTX2N6058
NPN - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JANTX2N6058 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 120mA, 12A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 12A volts.
JANTX2N6058 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTX2N6058 Applications
There are a lot of Microsemi Corporation
JANTX2N6058 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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