JANTX2N5666S
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- Mfr.Part #
- JANTX2N5666S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 200V 5A TO39
- Stock
- 31,458
- In Stock ：
- 31,458
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- JESD-30 Code :
- O-MBFM-P2
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e0
- Published :
- 2007
- Number of Terminations :
- 2
- Qualification Status :
- Qualified
- Power Dissipation :
- 1.2W
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Pin Count :
- 2
- Collector Base Voltage (VCBO) :
- 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 5V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5A, 1A
- Max Collector Current :
- 5A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- PIN/PEG
- Max Power Dissipation :
- 1.2W
- Pbfree Code :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/455
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Lead, Tin
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 200V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 200nA
- JEDEC-95 Code :
- TO-5
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 20 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Datasheets
- JANTX2N5666S
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N5666S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 1A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.
JANTX2N5666S Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V
JANTX2N5666S Applications
There are a lot of Microsemi Corporation
JANTX2N5666S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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