JANTX2N5582
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- Mfr.Part #
- JANTX2N5582
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46-3
- Stock
- 2,107
- In Stock ：
- 2,107
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Terminal Form :
- Wire
- Pbfree Code :
- No
- Contact Plating :
- Lead, Tin
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Case Connection :
- COLLECTOR
- Packaging :
- Bulk
- Mount :
- Through Hole
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- 6V
- Series :
- Military, MIL-PRF-19500/423
- Max Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Type :
- NPN
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Pins :
- 3
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 50V
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 75V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Factory Lead Time :
- 23 Weeks
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Datasheets
- JANTX2N5582
NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTX2N5582 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 800mA volts.
JANTX2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
JANTX2N5582 Applications
There are a lot of Microsemi Corporation
JANTX2N5582 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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