JANTX2N4033
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- Mfr.Part #
- JANTX2N4033
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO39
- Stock
- 10,071
- In Stock ：
- 10,071
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 800mW
- Series :
- Military, MIL-PRF-19500/512
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- JESD-609 Code :
- e0
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Bulk
- Polarity/Channel Type :
- PNP
- Pin Count :
- 2
- Configuration :
- Single
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Terminal Form :
- Wire
- Factory Lead Time :
- 23 Weeks
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 40ns
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2002
- Power Dissipation :
- 800mW
- Datasheets
- JANTX2N4033
PNP -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N4033 Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.The maximum collector current is 1A volts.
JANTX2N4033 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V
JANTX2N4033 Applications
There are a lot of Microsemi Corporation
JANTX2N4033 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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