JANTX2N3811

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

350mW

Transistor Element Material :

SILICON

Published :

2007

Terminal Finish :

Tin/Lead (Sn/Pb)

Max Power Dissipation :

350mW

JESD-609 Code :

e0

Polarity :

PNP

Series :

Military, MIL-PRF-19500/336

Radiation Hardening :

No

Pin Count :

8

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Reference Standard :

MIL-19500

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Max Collector Current :

50mA

Terminal Position :

BOTTOM

Packaging :

Bulk

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

Collector Emitter Voltage (VCEO) :

60V

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-65°C~200°C TJ

Mounting Type :

Through Hole

Package / Case :

TO-78-6 Metal Can

Collector Base Voltage (VCBO) :

60V

Transistor Type :

2 PNP (Dual)

Number of Elements :

2

Collector Emitter Breakdown Voltage :

60V

Current - Collector Cutoff (Max) :

10μA ICBO

Terminal Form :

Wire

Number of Pins :

6

Number of Terminations :

6