JANTX2N3811

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

5V

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Radiation Hardening :

No

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector Cutoff (Max) :

10μA ICBO

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Package / Case :

TO-78-6 Metal Can

Collector Emitter Voltage (VCEO) :

60V

Number of Terminations :

6

Packaging :

Bulk

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

60V

Pin Count :

8

Terminal Form :

Wire

Power Dissipation :

350mW

Mounting Type :

Through Hole

ECCN Code :

EAR99

Max Power Dissipation :

350mW

Transistor Type :

2 PNP (Dual)

Max Collector Current :

50mA

Series :

Military, MIL-PRF-19500/336

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~200°C TJ

Polarity :

PNP

Published :

2007

Terminal Position :

BOTTOM

Reference Standard :

MIL-19500

Transistor Element Material :

SILICON

Number of Pins :

6

JESD-609 Code :

e0