JANTX2N3810L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

50mA

Number of Elements :

2

Qualification Status :

Qualified

Current - Collector Cutoff (Max) :

10μA ICBO

HTS Code :

8541.21.00.95

Collector Emitter Voltage (VCEO) :

250mV

Transistor Element Material :

SILICON

Series :

Military, MIL-PRF-19500/336

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-65°C~200°C TJ

Pbfree Code :

No

Terminal Position :

BOTTOM

Reference Standard :

MIL-19500

Polarity/Channel Type :

PNP

Packaging :

Bulk

Max Power Dissipation :

350mW

Terminal Form :

Wire

Package / Case :

TO-78-6 Metal Can

RoHS Status :

Non-RoHS Compliant

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

60V

Transistor Type :

2 PNP (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Pin Count :

8

Mounting Type :

Through Hole

Power - Max :

350mW

JESD-609 Code :

e0

Number of Pins :

6

Mount :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Number of Terminations :

6

Published :

2007

Configuration :

SEPARATE, 2 ELEMENTS

ECCN Code :

EAR99

Factory Lead Time :

23 Weeks

Collector Base Voltage (VCBO) :

60V