JANTX2N3501L
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- Mfr.Part #
- JANTX2N3501L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A TO5
- Stock
- 13,388
- In Stock ：
- 13,388
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Qualified
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 300mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 150V
- ECCN Code :
- EAR99
- Published :
- 2007
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 23 Weeks
- Power Dissipation :
- 1W
- Number of Terminations :
- 3
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Terminal Form :
- Wire
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/366
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Pbfree Code :
- No
- Lead Free :
- Contains Lead
- Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 150V
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Datasheets
- JANTX2N3501L
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTX2N3501L Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A maximum collector current of 300mA volts is possible.
JANTX2N3501L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
JANTX2N3501L Applications
There are a lot of Microsemi Corporation
JANTX2N3501L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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