JANTX2N2060

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Max Power Dissipation :

600mW

Terminal Form :

Wire

Terminal Position :

BOTTOM

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

RoHS Status :

Non-RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Collector Base Voltage (VCBO) :

100V

Pbfree Code :

No

Operating Temperature :

-65°C~200°C TJ

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

ECCN Code :

EAR99

Mounting Type :

Through Hole

Power - Max :

2.12W

Reference Standard :

MIL-19500/270

Series :

Military, MIL-PRF-19500/270

Number of Pins :

6

Current - Collector (Ic) (Max) :

500mA

Pin Count :

8

JESD-609 Code :

e0

Current - Collector Cutoff (Max) :

10μA ICBO

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Transistor Type :

2 NPN (Dual)

HTS Code :

8541.21.00.95

Number of Terminations :

6

Qualification Status :

Qualified

Max Collector Current :

500mA

Published :

2002

Mount :

Through Hole

Factory Lead Time :

23 Weeks

Radiation Hardening :

No

Number of Elements :

2

Package / Case :

TO-78-6 Metal Can

Configuration :

SEPARATE, 2 ELEMENTS

Collector Emitter Voltage (VCEO) :

60V