JANSD2N2907AUB/TR
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- Mfr.Part #
- JANSD2N2907AUB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A UB
- Stock
- 25,747
- In Stock ：
- 25,747
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS :
- N
- Product Status :
- Active
- Product Category :
- Bipolar Transistors - BJT
- Base Product Number :
- 2N2907
- Package / Case :
- 3-SMD, No Lead
- Current - Collector (Ic) (Max) :
- 600 mA
- Package :
- Tape and Reel (TR)
- Series :
- Military, MIL-PRF-19500/291
- Subcategory :
- Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Frequency - Transition :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Manufacturer :
- Microchip
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Operating Temperature :
- -65°C ~ 200°C
- Current - Collector Cutoff (Max) :
- 50nA
- Mounting Type :
- Surface Mount
- Brand :
- Microchip / Microsemi
- Transistor Type :
- PNP
- Power - Max :
- 500 mW
- Supplier Device Package :
- UB
- Packaging :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Datasheets
- JANSD2N2907AUB/TR
PNP -65°C ~ 200°C 50nA 3-SMD, No Lead Bulk Surface Mount
JANSD2N2907AUB/TR Overview
This device has a DC current gain of 100 @ 150mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 60 V maximal voltage is present.
JANSD2N2907AUB/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of UB
JANSD2N2907AUB/TR Applications
There are a lot of Microchip Technology
JANSD2N2907AUB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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