JAN2N918
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- Mfr.Part #
- JAN2N918
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, Non-Standard
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A TO72
- Stock
- 20,922
- In Stock ：
- 20,922
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 3V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3mA 1V
- Collector Emitter Voltage (VCEO) :
- 15V
- Max Power Dissipation :
- 200mW
- Power Dissipation :
- 200mW
- Published :
- 2007
- Polarity/Channel Type :
- NPN
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Max Collector Current :
- 50mA
- Pin Count :
- 3
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Breakdown Voltage :
- 15V
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Qualified
- Mount :
- Surface Mount
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Type :
- NPN
- Series :
- Military, MIL-PRF-19500/301
- Contact Plating :
- Lead, Tin
- Terminal Form :
- NO LEAD
- JESD-609 Code :
- e0
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Package / Case :
- 3-SMD, Non-Standard
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JAN2N918
NPN -65°C~200°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Non-Standard Bulk Surface Mount
JAN2N918UB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.During maximum operation, collector current can be as low as 50mA volts.
JAN2N918UB Features
the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
JAN2N918UB Applications
There are a lot of Microsemi Corporation
JAN2N918UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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