IXGT16N170
- Mfr.Part #
- IXGT16N170
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- IGBT 1700V 32A 190W TO268
- Stock
- 15,381
- In Stock :
- 15,381
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Package :
- Tube
- Mount :
- Surface Mount
- Product Category :
- IGBT Transistors
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- POWER CONTROL
- Continuous Collector Current :
- 32 A
- Gate-Emitter Voltage-Max :
- 20V
- Technology :
- Si
- Current - Collector (Ic) (Max) :
- 32A
- Product Status :
- Active
- Base Product Number :
- IXGT16
- Turn On Time :
- 90 ns
- Length :
- 16.05 mm
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Product Type :
- IGBT Transistors
- Series :
- --
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector-Emitter Voltage-Max :
- 1700 V
- Terminal Form :
- THROUGH-HOLE
- JEDEC-95 Code :
- TO-247AD
- Switching Energy :
- 9.3mJ (off)
- Manufacturer :
- IXYS
- Gate-Emitter Thr Voltage-Max :
- 5V
- Power - Max :
- 190W
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 24 Weeks
- Voltage - Collector Emitter Breakdown (Max) :
- 1700V
- Package Shape :
- RECTANGULAR
- Test Condition :
- 1360V, 16A, 10 Ω, 15V
- Collector Emitter Breakdown Voltage :
- 1.7kV
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Case Connection :
- COLLECTOR
- Supplier Device Package :
- TO-268
- Input Type :
- Standard
- Weight :
- 4.500005g
- Collector Current-Max (IC) :
- 32 A
- Height :
- 5.1 mm
- Brand :
- IXYS
- JESD-609 Code :
- e3
- Turn Off Time-Nom (toff) :
- 1600 ns
- Pin Count :
- 3
- Max Collector Current :
- 32A
- Element Configuration :
- Single
- Current - Collector Pulsed (Icm) :
- 80A
- Power Dissipation-Max (Abs) :
- 190 W
- Base Part Number :
- IXG*16N170
- Configuration :
- Single
- Published :
- 2006
- Gate Charge :
- 78nC
- Fall Time-Max (tf) :
- 1100ns
- Power Dissipation :
- 190W
- Collector Emitter Voltage (VCEO) :
- 1.7kV
- IGBT Type :
- NPT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Td (on/off) @ 25°C :
- 45ns/400ns
- Width :
- 14 mm
- Number of Elements :
- 1
- Surface Mount :
- No
- Vce(on) (Max) @ Vge, Ic :
- 3.5V @ 15V, 16A
- Number of Terminations :
- 3
- Operating Temperature Range :
- - 55 C to + 150 C
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2.7V
- Max Power Dissipation :
- 190W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Datasheets
- IXGT16N170

IXGT16N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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