IXGH120N30B3

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Published :

2008

Tradename :

GenX3

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

24 Weeks

Max Operating Temperature :

150 °C

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Length :

16.26 mm

Technology :

Si

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

75A

Turn Off Time-Nom (toff) :

356 ns

Collector Emitter Saturation Voltage :

1.42V

Configuration :

Single

Pin Count :

3

Base Part Number :

IXG*120N30

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 120A

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Terminals :

3

Number of Elements :

1

Case Connection :

COLLECTOR

Min Operating Temperature :

-55 °C

Operating Temperature Range :

- 55 C to + 150 C

Power - Max :

540W

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Terminal Form :

THROUGH-HOLE

Max Power Dissipation :

540W

Voltage - Collector Emitter Breakdown (Max) :

300V

Collector Emitter Voltage (VCEO) :

300V

IGBT Type :

PT

Power Dissipation-Max (Abs) :

540 W

Brand :

IXYS

Supplier Device Package :

TO-247AD (IXGH)

Element Configuration :

Single

Manufacturer :

IXYS

Switching Energy :

--

Packaging :

Tube

Qualification Status :

Not Qualified

Gate-Emitter Thr Voltage-Max :

5V

Collector Current-Max (IC) :

75 A

Weight :

6.500007g

Series :

GenX3™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-247-3

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXGH120

Maximum Operating Temperature :

+ 150 C

Turn On Time :

41 ns

Continuous Collector Current :

75 A

Gate-Emitter Voltage-Max :

20V

Minimum Operating Temperature :

- 55 C

Power Dissipation :

540W

Mounting Style :

Through Hole

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

300V

Product Type :

IGBT Transistors

Input Type :

Standard

JEDEC-95 Code :

TO-247

Current - Collector (Ic) (Max) :

75A

Transistor Element Material :

SILICON

RoHS :

Compliant

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Product Category :

IGBT Transistors

Operating Temperature :

-55°C~150°C TJ

Current - Collector Pulsed (Icm) :

480A

Mount :

Through Hole

Td (on/off) @ 25°C :

--

Width :

5.3 mm

Package :

Tube

Height :

21.46 mm

Gate Charge :

225nC

Package Shape :

RECTANGULAR

Test Condition :

--

Product Status :

Active

Collector-Emitter Voltage-Max :

300 V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)