IXFL44N60

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Mfr.Part #
IXFL44N60
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 600V 41A ISOPLUS264
Stock
41,217
In Stock :
41,217

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Type :
1 N-Channel
Drain-source On Resistance-Max :
0.13Ohm
Base Product Number :
IXFL44
Manufacturer :
IXYS
Length :
20.29mm
Power Dissipation-Max :
500W Tc
Supplier Device Package :
ISOPLUS264™
Case Connection :
Isolated
Drain to Source Voltage (Vdss) :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Tradename :
HyperFET
JESD-609 Code :
e1
Number of Elements :
1
Number of Terminals :
3
JESD-30 Code :
R-PSIP-T3
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
20V
Product Category :
MOSFET
Fall Time (Typ) :
45 ns
Published :
2003
Series :
HiPerFET™
Power Dissipation :
500W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
41A
Width :
5.21mm
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
600V
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Type :
MOSFET
Turn-Off Delay Time :
110 ns
Pulsed Drain Current-Max (IDM) :
176A
Channel Mode :
Enhancement
Power Dissipation (Max) :
500W (Tc)
Vgs(th) (Max) @ Id :
4.5V @ 8mA
FET Feature :
--
Packaging :
Tube
Avalanche Energy Rating (Eas) :
3000 mJ
Input Capacitance (Ciss) (Max) @ Vds :
8900pF @ 25V
Rds On (Max) @ Id, Vgs :
130m Ω @ 22A, 10V
Pbfree Code :
yes
Mounting Type :
Through Hole
RoHS :
Details
Package / Case :
ISOPLUS264™
DS Breakdown Voltage-Min :
600 V
Subcategory :
MOSFETs
Configuration :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Channels :
1 Channel
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Number of Pins :
264
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Package :
Tube
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
42 ns
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Vgs (Max) :
±20V
Height :
26.42mm
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Rise Time :
55ns
Datasheets
IXFL44N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL44N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:ISOPLUS264™, Number of Channels:1 Channel, Number of Pins:264, Number of Terminations:3, IXFL44N60 pinout, IXFL44N60 datasheet PDF, IXFL44N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL44N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 130m Ω @ 22A, 10V ±20V 8900pF @ 25V 330nC @ 10V 600V ISOPLUS264™

IXFL44N60 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 8900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 41A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 176A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 42 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFL44N60 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 176A.
a 600V drain to source voltage (Vdss)


IXFL44N60 Applications


There are a lot of IXYS
IXFL44N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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