IXFL44N60
- Mfr.Part #
- IXFL44N60
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 41A ISOPLUS264
- Stock
- 41,217
- In Stock :
- 41,217
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Type :
- 1 N-Channel
- Drain-source On Resistance-Max :
- 0.13Ohm
- Base Product Number :
- IXFL44
- Manufacturer :
- IXYS
- Length :
- 20.29mm
- Power Dissipation-Max :
- 500W Tc
- Supplier Device Package :
- ISOPLUS264™
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- FET Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Tradename :
- HyperFET
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 45 ns
- Published :
- 2003
- Series :
- HiPerFET™
- Power Dissipation :
- 500W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 41A
- Width :
- 5.21mm
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 600V
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 110 ns
- Pulsed Drain Current-Max (IDM) :
- 176A
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 500W (Tc)
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- FET Feature :
- --
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 8900pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 22A, 10V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- RoHS :
- Details
- Package / Case :
- ISOPLUS264™
- DS Breakdown Voltage-Min :
- 600 V
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Channels :
- 1 Channel
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Number of Pins :
- 264
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Package :
- Tube
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 42 ns
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Height :
- 26.42mm
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Rise Time :
- 55ns
- Datasheets
- IXFL44N60
N-Channel Tube 130m Ω @ 22A, 10V ±20V 8900pF @ 25V 330nC @ 10V 600V ISOPLUS264™
IXFL44N60 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 8900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 41A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 176A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 42 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFL44N60 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 176A.
a 600V drain to source voltage (Vdss)
IXFL44N60 Applications
There are a lot of IXYS
IXFL44N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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