IS45S32800D-6TLA1
- Mfr.Part #
- IS45S32800D-6TLA1
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 86-TFSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PAR 86TSOP II
- Stock
- 43,295
- In Stock :
- 43,295
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Supply Voltage-Min (Vsup) :
- 3V
- Number of Pins :
- 86
- Qualification Status :
- Not Qualified
- Package / Case :
- 86-TFSOP (0.400, 10.16mm Width)
- Terminal Pitch :
- 0.5mm
- Memory Size :
- 256Mb 32M x 8
- Supply Voltage :
- 3.3V
- Height Seated (Max) :
- 1.2mm
- RoHS Status :
- ROHS3 Compliant
- Memory Interface :
- Parallel
- Number of Functions :
- 1
- Access Time :
- 5.4ns
- JESD-609 Code :
- e3
- Voltage - Supply :
- 3V~3.6V
- Supply Current-Max :
- 0.35mA
- Length :
- 22.22mm
- Refresh Cycles :
- 4096
- HTS Code :
- 8542.32.00.24
- Data Bus Width :
- 32b
- I/O Type :
- COMMON
- Organization :
- 8MX32
- Operating Temperature :
- -40°C~85°C TA
- Standby Current-Max :
- 0.003A
- Power Supplies :
- 3.3V
- Memory Format :
- DRAM
- Packaging :
- Tray
- Interleaved Burst Length :
- 1248
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Sequential Burst Length :
- 1248FP
- Number of Ports :
- 1
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Memory Density :
- 268435456 bit
- Operating Mode :
- SYNCHRONOUS
- Number of Terminations :
- 86
- Pin Count :
- 86
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Max (Vsup) :
- 3.6V
- Memory Width :
- 32
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Memory Type :
- Volatile
- Clock Frequency :
- 166MHz
- Pbfree Code :
- yes
- Datasheets
- IS45S32800D-6TLA1
Memory Integrated Silicon Solution, Inc. IS45S32800D-6TLA1 Overview
The Memory Integrated Silicon Solution, Inc. IS45S32800D-6TLA1 DRAM module stands out in the semiconductor industry for its robust capacity and reliability. Designed by Integrated Silicon Solution, Inc. (ISSI), this 256Mbit DRAM offers a balanced solution for advanced electronic systems requiring high-speed data processing and significant storage capability. Its use of the 86TSOP II package ensures enhanced thermal stability and overall durability, making it an ideal choice for manufacturers looking to integrate dependable memory solutions into their products.
IS45S32800D-6TLA1 Features
This IC DRAM is designed for high-performance applications, featuring a parallel interface for rapid data transfer and low latency. The 256Mbit capacity caters to systems requiring substantial memory in a compact form factor. Furthermore, the standard 86TSOP II package promotes improved heat dissipation, contributing to its reliability and performance under varying operational conditions.
IS45S32800D-6TLA1 Applications
- Consumer Electronics: Utilized in devices like digital cameras and gaming consoles, where high-speed memory is crucial for user interface responsiveness and data processing efficiency.
- Telecommunications: Employed in routers and switches to manage multiple data streams and maintain high throughput levels, ensuring efficient network performance.
- Automotive Systems: Integrated into infotainment and advanced driver assistance systems (ADAS) to provide rapid data access and support for real-time decision making.
- Industrial Automation: Crucial for control systems requiring quick access to data to monitor and adjust processes automatically and with high precision.
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