IS45S16100E-7TLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Standby Current-Max :

0.004A

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Memory Type :

Volatile

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Memory Width :

16

Operating Supply Voltage :

3.3V

Terminal Position :

Dual

Memory Size :

16Mb 1M x 16

Supply Voltage-Min (Vsup) :

3V

ECCN Code :

EAR99

Number of Ports :

1

Supply Voltage :

3.3V

Data Bus Width :

16b

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Sequential Burst Length :

1248FP

Refresh Cycles :

2048

Height Seated (Max) :

1.2mm

Memory Format :

DRAM

Organization :

1MX16

Terminal Finish :

Matte Tin (Sn) - annealed

Density :

16 Mb

Number of Functions :

1

Number of Pins :

50

Nominal Supply Current :

150mA

Interleaved Burst Length :

1248

Packaging :

Tray

Operating Temperature :

-40°C~85°C TA

Output Characteristics :

3-STATE

Access Time :

5.5ns

Address Bus Width :

12b

Length :

20.95mm

Terminal Pitch :

0.8mm

Mount :

Surface Mount

Voltage - Supply :

3V~3.6V

Clock Frequency :

143MHz

Additional Feature :

AUTO/SELF REFRESH

Pin Count :

50

Pbfree Code :

yes

HTS Code :

8542.32.00.02

Supply Voltage-Max (Vsup) :

3.6V

Number of Terminations :

50

Package / Case :

50-TSOP (0.400, 10.16mm Width)

I/O Type :

COMMON