IS45S16800E-7BLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Package / Case :

54-TFBGA

Memory Size :

128Mb 8M x 16

Voltage - Supply :

3V~3.6V

Memory Format :

DRAM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Output Characteristics :

3-STATE

Memory Interface :

Parallel

Terminal Pitch :

0.8mm

Pin Count :

54

Mounting Type :

Surface Mount

Data Bus Width :

16b

Access Time :

5.4ns

Nominal Supply Current :

130mA

Interleaved Burst Length :

1248

ECCN Code :

EAR99

Supply Voltage-Min (Vsup) :

3V

Memory Width :

16

Supply Voltage-Max (Vsup) :

3.6V

Memory Type :

Volatile

Radiation Hardening :

No

Additional Feature :

AUTO/SELF REFRESH

Height Seated (Max) :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

10

I/O Type :

COMMON

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tray

Length :

8mm

Operating Temperature :

-40°C~105°C TA

Clock Frequency :

143MHz

Density :

128 Mb

Peak Reflow Temperature (Cel) :

260

Max Supply Current :

130mA

Number of Ports :

1

Number of Functions :

1

Mount :

Surface Mount

Address Bus Width :

14b

RoHS Status :

RoHS Compliant

Number of Terminations :

54

Refresh Cycles :

4096

JESD-609 Code :

e1

Number of Pins :

54

Terminal Position :

BOTTOM

Operating Supply Voltage :

3.3V

Sequential Burst Length :

1248FP

Supply Voltage :

3.3V

Pbfree Code :

yes

Standby Current-Max :

0.001A

Organization :

8MX16