IS45S16800E-6TLA1
- Mfr.Part #
- IS45S16800E-6TLA1
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PAR 54TSOP II
- Stock
- 24,314
- In Stock :
- 24,314
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Output Characteristics :
- 3-STATE
- Memory Type :
- Volatile
- Memory Width :
- 16
- Interleaved Burst Length :
- 1248
- Supply Voltage-Max (Vsup) :
- 3.6V
- Memory Interface :
- Parallel
- Standby Current-Max :
- 0.001A
- Data Bus Width :
- 16b
- Number of Pins :
- 54
- Access Time :
- 5.4ns
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Pin Count :
- 54
- Voltage - Supply :
- 3V~3.6V
- Address Bus Width :
- 14b
- Operating Supply Voltage :
- 3.3V
- Supply Voltage :
- 3.3V
- Operating Temperature :
- -40°C~85°C TA
- Qualification Status :
- Not Qualified
- Terminal Position :
- Dual
- Number of Functions :
- 1
- Memory Size :
- 128Mb 8M x 16
- Number of Ports :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Mount :
- Surface Mount
- Nominal Supply Current :
- 150mA
- JESD-609 Code :
- e3
- Memory Format :
- DRAM
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Min (Vsup) :
- 3V
- Organization :
- 8MX16
- Pbfree Code :
- yes
- Terminal Pitch :
- 0.8mm
- Peak Reflow Temperature (Cel) :
- 260
- Clock Frequency :
- 166MHz
- I/O Type :
- COMMON
- Terminal Finish :
- Matte Tin (Sn) - annealed
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- SYNCHRONOUS
- Length :
- 22.22mm
- Sequential Burst Length :
- 1248FP
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Refresh Cycles :
- 4096
- Packaging :
- Tray
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Terminations :
- 54
- Density :
- 128 Mb
- Height Seated (Max) :
- 1.2mm
- Datasheets
- IS45S16800E-6TLA1
Memory Integrated Silicon Solution, Inc. (ISSI) IS45S16800E-6TLA1 Overview
Introducing the Memory Integrated Silicon Solution, Inc. (ISSI) IS45S16800E-6TLA1, a high-performance DRAM IC that delivers exceptional reliability and speed. With a robust storage capacity of 128Mbit and encapsulated in a compact 54TSOP II package, this product is designed to meet the demanding requirements of modern electronic devices. Engineered by ISSI, a leader in advanced memory solutions, this DRAM IC ensures optimal performance under a wide range of operational conditions, making it an ideal choice for manufacturers looking to enhance their systems with top-tier memory components.
IS45S16800E-6TLA1 Features
The IS45S16800E-6TLA1 offers several key features that distinguish it from other memory products:
- Capacity: 128Mbit of high-speed DRAM, ideal for applications requiring large memory buffers.
- Package: Utilizes a 54TSOP II form factor that minimizes space usage while providing robust performance and reliability.
- Performance: Designed for high-speed operation, it provides enhanced throughput for memory-intensive applications.
- Compatibility: Easily integrated into various circuit designs, supporting a broad range of industrial and consumer products.
IS45S16800E-6TLA1 Applications
- Consumer Electronics: Used in devices like digital cameras and MP3 players, where high memory capacity is crucial for user data storage and fast processing capabilities.
- Telecommunication: Implements in networking hardware such as routers and switches, enhancing data buffer management and system reliability.
- Automotive: Employs in advanced automotive infotainment systems, providing the necessary speed and storage for real-time data processing and multimedia.
- Industrial: Applied in industrial automation systems, where robust memory helps manage complex operations and control tasks efficiently.
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