IS45S16160D-6BLA1
- Mfr.Part #
- IS45S16160D-6BLA1
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 54TFBGA
- Stock
- 34,028
- In Stock :
- 34,028
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Number of Functions :
- 1
- Organization :
- 16MX16
- Length :
- 13mm
- RoHS Status :
- RoHS Compliant
- Output Characteristics :
- 3-STATE
- Operating Temperature :
- -40°C~85°C TA
- Voltage - Supply :
- 3V~3.6V
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Max (Vsup) :
- 3.6V
- Data Bus Width :
- 16b
- Memory Interface :
- Parallel
- I/O Type :
- COMMON
- Access Time :
- 5.4ns
- Memory Width :
- 16
- Number of Terminations :
- 54
- Address Bus Width :
- 15b
- Density :
- 256 Mb
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Height Seated (Max) :
- 1.2mm
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Refresh Cycles :
- 8192
- Standby Current-Max :
- 0.003A
- Memory Type :
- Volatile
- Pin Count :
- 54
- Package / Case :
- 54-TFBGA
- Interleaved Burst Length :
- 1248
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Supply Voltage-Min (Vsup) :
- 3V
- Operating Supply Voltage :
- 3.3V
- Number of Pins :
- 54
- Memory Format :
- DRAM
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Number of Ports :
- 1
- Radiation Hardening :
- No
- Memory Size :
- 256Mb 16M x 16
- Packaging :
- Tray
- Supply Voltage :
- 3.3V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Position :
- BOTTOM
- Terminal Pitch :
- 0.8mm
- Supply Current-Max :
- 0.18mA
- Clock Frequency :
- 166MHz
- Mounting Type :
- Surface Mount
- Sequential Burst Length :
- 1248FP
- Datasheets
- IS45S16160D-6BLA1
Memory Integrated Silicon Solution, Inc. (ISSI) IS45S16160D-6BLA1 Overview
Discover unparalleled memory performance with the IS45S16160D-6BLA1 from Integrated Silicon Solution, Inc. (ISSI). This cutting-edge IC DRAM boasts a capacity of 256MBIT and operates in a parallel configuration, housed in a compact 54TFBGA package. Designed to meet the demands of modern electronic devices, this memory solution offers reliability, efficiency, and versatility.
IS45S16160D-6BLA1 Features
- High Capacity: With a generous 256MBIT capacity, this IC DRAM provides ample storage for diverse applications.
- Parallel Configuration: The parallel architecture enhances data transfer speeds and efficiency.
- Compact Design: Encased in a space-saving 54TFBGA package, this memory module is ideal for compact devices.
- Reliable Performance: Engineered by Integrated Silicon Solution, Inc. (ISSI), renowned for quality and reliability in memory solutions.
- Low Power Consumption: Despite its high performance, this memory module maintains low power consumption, ideal for energy-efficient devices.
IS45S16160D-6BLA1 Applications
- Consumer Electronics: Power a wide range of consumer devices, including smartphones, tablets, and digital cameras, with seamless memory performance.
- Networking Equipment: Enable robust data processing and storage in networking devices such as routers and switches for efficient data transmission and management.
- Industrial Automation: Enhance the performance of industrial control systems, PLCs, and robotics with reliable memory solutions.
This IC DRAM enhances the multitasking capabilities and overall responsiveness of consumer electronics, ensuring smooth operation even during intensive tasks.
The high-speed parallel configuration of this memory module optimizes data handling, facilitating seamless communication in networking environments.
With its compact design and reliable operation, this IC DRAM ensures uninterrupted performance in demanding industrial applications, enhancing productivity and efficiency.
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