IS42S81600E-6TLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

I/O Type :

COMMON

Interleaved Burst Length :

1248

Memory Type :

Volatile

Data Bus Width :

8B

Number of Pins :

54

Density :

128 Mb

Sequential Burst Length :

1248FP

Time@Peak Reflow Temperature-Max (s) :

10

Height Seated (Max) :

1.2mm

Supply Voltage-Max (Vsup) :

3.6V

Packaging :

Tray

Memory Width :

8

Mount :

Surface Mount

Memory Size :

128Mb 16M x 8

Supply Voltage-Min (Vsup) :

3V

Number of Terminations :

54

Mounting Type :

Surface Mount

Terminal Position :

Dual

Memory Interface :

Parallel

Refresh Cycles :

4096

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Pin Count :

54

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Output Characteristics :

3-STATE

Address Bus Width :

14b

Standby Current-Max :

0.002A

Number of Functions :

1

Terminal Finish :

Matte Tin (Sn) - annealed

Organization :

16MX8

Length :

22.22mm

Operating Mode :

SYNCHRONOUS

Voltage - Supply :

3V~3.6V

Operating Temperature :

-40°C~85°C TA

Memory Format :

DRAM

Access Time :

5.4ns

Clock Frequency :

166MHz

Pbfree Code :

yes

Supply Voltage :

3.3V

Number of Ports :

1

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Nominal Supply Current :

150mA

JESD-609 Code :

e3

Operating Supply Voltage :

3.3V

Qualification Status :

Not Qualified

Terminal Pitch :

0.8mm

Additional Feature :

AUTO/SELF REFRESH