IS42RM16160D-7BLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Radiation Hardening :

No

Length :

13mm

Standby Current-Max :

0.001A

Time@Peak Reflow Temperature-Max (s) :

10

Contact Plating :

Copper, Silver, Tin

Memory Type :

Volatile

Output Characteristics :

3-STATE

Interleaved Burst Length :

1248

JESD-609 Code :

e1

Memory Format :

DRAM

Memory Size :

256Mb 16M x 16

Lead Free :

Lead Free

Package / Case :

54-TFBGA

Density :

256 Mb

Supply Voltage-Min (Vsup) :

2.3V

Pin Count :

54

Supply Voltage :

2.5V

Nominal Supply Current :

110mA

Height Seated (Max) :

1.2mm

Supply Voltage-Max (Vsup) :

2.7V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C~85°C TA

I/O Type :

COMMON

Voltage - Supply :

2.3V~2.7V

Max Frequency :

143MHz

Data Bus Width :

16b

Access Time :

5.4ns

Number of Pins :

54

Memory Interface :

Parallel

Terminal Pitch :

0.8mm

Refresh Cycles :

8192

RoHS Status :

ROHS3 Compliant

Number of Ports :

1

Address Bus Width :

15b

Packaging :

Tray

Mount :

Surface Mount

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Functions :

1

Memory Width :

16

Organization :

16MX16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Sequential Burst Length :

1248FP

Terminal Position :

BOTTOM

Additional Feature :

AUTO/SELF REFRESH

Operating Supply Voltage :

2.5V

Number of Terminations :

54

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260