IS42S32400B-6TL
- Mfr.Part #
- IS42S32400B-6TL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 86-TFSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PAR 86TSOP II
- Stock
- 13,898
- In Stock :
- 13,898
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Height Seated (Max) :
- 1.2mm
- Sequential Burst Length :
- 1248FP
- Memory Interface :
- Parallel
- Supply Voltage-Max (Vsup) :
- 3.6V
- Memory Size :
- 128Mb 4M x 32
- Packaging :
- Tray
- Number of Ports :
- 1
- Memory Width :
- 32
- ECCN Code :
- EAR99
- Address Bus Width :
- 14b
- Data Bus Width :
- 32b
- Mounting Type :
- Surface Mount
- Density :
- 128 Mb
- Peak Reflow Temperature (Cel) :
- 260
- Memory Type :
- Volatile
- HTS Code :
- 8542.32.00.02
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Refresh Cycles :
- 4096
- I/O Type :
- COMMON
- Access Time :
- 5.4ns
- Number of Pins :
- 86
- Nominal Supply Current :
- 180mA
- RoHS Status :
- RoHS Compliant
- Standby Current-Max :
- 0.001A
- Terminal Position :
- Dual
- Number of Functions :
- 1
- Operating Supply Voltage :
- 3.3V
- Operating Temperature :
- 0°C~70°C TA
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Terminations :
- 86
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Supply Voltage :
- 3.3V
- Terminal Pitch :
- 0.5mm
- Length :
- 22.22mm
- Package / Case :
- 86-TFSOP (0.400, 10.16mm Width)
- Voltage - Supply :
- 3V~3.6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Memory Format :
- DRAM
- Organization :
- 4MX32
- Pin Count :
- 86
- Output Characteristics :
- 3-STATE
- Interleaved Burst Length :
- 1248
- Supply Voltage-Min (Vsup) :
- 3V
- Additional Feature :
- AUTO/SELF REFRESH
- Clock Frequency :
- 166MHz
- Mount :
- Surface Mount
- Datasheets
- IS42S32400B-6TL
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32400B-6TL Overview
Discover cutting-edge memory solutions crafted by Integrated Silicon Solution, Inc. (ISSI), with their top-tier product, the IS42S32400B-6TL. This integrated circuit dynamic random-access memory (DRAM) module boasts a capacity of 128MBIT PAR, housed in an 86TSOP II package. Designed to meet the demands of modern computing and electronic systems, this DRAM module stands as a pinnacle of reliability, performance, and efficiency.
Featuring advanced architecture and precision engineering, the IS42S32400B-6TL promises seamless integration and exceptional functionality, making it the preferred choice for B2B clients seeking high-quality memory solutions at scale.
IS42S32400B-6TL Features
- High Capacity: With a 128MBIT PAR capacity, this DRAM module ensures ample storage for data-intensive applications.
- Compact Design: Housed in an 86TSOP II package, the IS42S32400B-6TL offers a space-efficient solution for memory integration in various electronic devices.
- Reliability: Built with robust materials and state-of-the-art technology, this memory module delivers consistent performance and durability.
- Speed: Experience enhanced data transfer rates and seamless multitasking capabilities with the high-speed functionality of the IS42S32400B-6TL.
- Compatibility: Designed to meet industry standards, this DRAM module ensures compatibility with a wide range of devices and systems.
IS42S32400B-6TL Applications
- Embedded Systems: Utilize the IS42S32400B-6TL in embedded systems, such as industrial automation equipment and IoT devices, to store and process data efficiently in demanding environments.
- Networking Equipment: Enhance the performance of networking equipment, including routers, switches, and servers, by integrating the IS42S32400B-6TL for seamless data processing and storage.
- Telecommunications: Improve the reliability and speed of telecommunications systems, such as base stations and communication servers, with the high-capacity and high-speed capabilities of the IS42S32400B-6TL.
- Consumer Electronics: Elevate the functionality of consumer electronics, including smart TVs, gaming consoles, and digital cameras, by incorporating the IS42S32400B-6TL for enhanced memory storage and processing power.
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