IS42S16100E-5TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Pin Count :

50

Number of Pins :

50

Organization :

1MX16

Time@Peak Reflow Temperature-Max (s) :

40

Number of Ports :

1

Memory Format :

DRAM

Terminal Finish :

Matte Tin (Sn) - annealed

Radiation Hardening :

No

Number of Terminations :

50

Output Characteristics :

3-STATE

Clock Frequency :

200MHz

Sequential Burst Length :

1248FP

JESD-609 Code :

e3

Height Seated (Max) :

1.2mm

Address Bus Width :

12b

Memory Width :

16

Supply Voltage-Min (Vsup) :

3V

Standby Current-Max :

0.002A

Operating Supply Voltage :

3.3V

Peak Reflow Temperature (Cel) :

260

Memory Size :

16Mb 1M x 16

Number of Functions :

1

Memory Interface :

Parallel

Operating Temperature :

0°C~70°C TA

HTS Code :

8542.32.00.02

RoHS Status :

RoHS Compliant

Nominal Supply Current :

170mA

Package / Case :

50-TSOP (0.400, 10.16mm Width)

Data Bus Width :

16b

I/O Type :

COMMON

Terminal Pitch :

0.8mm

Terminal Position :

Dual

Additional Feature :

AUTO/SELF REFRESH

Refresh Cycles :

2048

Access Time :

5ns

Supply Voltage :

3.3V

Mount :

Surface Mount

Interleaved Burst Length :

1248

Length :

20.95mm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Density :

16 Mb

Packaging :

Tray

Pbfree Code :

yes

Supply Voltage-Max (Vsup) :

3.6V

Mounting Type :

Surface Mount

Memory Type :

Volatile

Voltage - Supply :

3V~3.6V

ECCN Code :

EAR99