IRLZ44ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

78 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Number of Pins :

3

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

51A

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

Turn-Off Delay Time :

25 ns

Vgs (Max) :

±16V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

80W Tc

Length :

10.668mm

Height :

8.77mm

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 25V

Current Rating :

51A

Pulsed Drain Current-Max (IDM) :

204A

Recovery Time :

32 ns

JEDEC-95 Code :

TO-220AB

Published :

2004

Mounting Type :

Through Hole

Number of Terminations :

3

Series :

HEXFET®

Dual Supply Voltage :

55V

Turn On Delay Time :

14 ns

Resistance :

13.5mOhm

Lead Free :

Contains Lead, Lead Free

Radiation Hardening :

No

REACH SVHC :

No SVHC

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Package / Case :

TO-220-3

Power Dissipation :

80W

Transistor Element Material :

SILICON

Nominal Vgs :

3 V

Rise Time :

160ns

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 31A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

42 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Voltage - Rated DC :

55V

Case Connection :

DRAIN

Width :

4.826mm

Mount :

Through Hole