IRLZ14SPBF
- Mfr.Part #
- IRLZ14SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10A D2PAK
- Stock
- 7,729
- In Stock :
- 7,729
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 10A
- Mount :
- Surface Mount
- Weight :
- 1.437803g
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Vgs (Max) :
- ±10V
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation :
- 3.7W
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Factory Lead Time :
- 8 Weeks
- Turn On Delay Time :
- 9.3 ns
- Supplier Device Package :
- D2PAK
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Length :
- 10.41mm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 17 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Input Capacitance :
- 400pF
- Resistance :
- 200mOhm
- Packaging :
- Tube
- Recovery Time :
- 130 ns
- Number of Pins :
- 3
- Rds On Max :
- 200 mΩ
- Drain to Source Resistance :
- 200mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 26 ns
- Height :
- 4.83mm
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 6A, 5V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Min Operating Temperature :
- -55°C
- Published :
- 2014
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Rise Time :
- 110ns
- Operating Temperature :
- -55°C~175°C TJ
- Max Operating Temperature :
- 175°C
- Width :
- 9.65mm
- Datasheets
- IRLZ14SPBF
N-Channel Tube 200mOhm @ 6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLZ14SPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 17 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 200mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLZ14SPBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRLZ14SPBF Applications
There are a lot of Vishay Siliconix
IRLZ14SPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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