IRLZ44NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Mount :

Through Hole

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

175°C

Resistance :

22mOhm

Fall Time (Typ) :

15 ns

Mounting Type :

Through Hole

Power Dissipation-Max :

3.8W Ta 110W Tc

Lead Pitch :

2.54mm

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Nominal Vgs :

2 V

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

JEDEC-95 Code :

TO-220AB

Current Rating :

47A

Height :

19.8mm

Gate to Source Voltage (Vgs) :

16V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Number of Elements :

1

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

47A Tc

RoHS Status :

ROHS3 Compliant

Width :

4.69mm

Number of Pins :

3

Continuous Drain Current (ID) :

47A

Number of Terminations :

3

Element Configuration :

Single

Turn-Off Delay Time :

26 ns

Vgs (Max) :

±16V

FET Type :

N-Channel

Length :

10.5156mm

Recovery Time :

120 ns

Packaging :

Tube

Threshold Voltage :

2V

Series :

HEXFET®

Rise Time :

84ns

Published :

1997

Power Dissipation :

83W

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

55V

Dual Supply Voltage :

55V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Voltage - Rated DC :

55V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Transistor Element Material :

SILICON