IRLZ34NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

JESD-609 Code :

e0

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Power Dissipation-Max :

3.8W Ta 68W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8541.29.00.95

Published :

1997

FET Type :

N-Channel

Number of Terminations :

2

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Drain Current-Max (Abs) (ID) :

30A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain-source On Resistance-Max :

0.046Ohm

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

35m Ω @ 16A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

110A

Qualification Status :

Not Qualified

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

55V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

30A Tc

DS Breakdown Voltage-Min :

55V

Avalanche Energy Rating (Eas) :

110 mJ