IRLZ34NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

30A

Turn-Off Delay Time :

21 ns

Width :

4.69mm

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Resistance :

35mOhm

Published :

1997

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2 V

Case Connection :

DRAIN

Lead Free :

Lead Free

Dual Supply Voltage :

55V

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Lead Pitch :

2.54mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

55V

Number of Pins :

3

Transistor Application :

SWITCHING

Recovery Time :

110 ns

Height :

8.77mm

Fall Time (Typ) :

29 ns

Power Dissipation :

56W

Gate to Source Voltage (Vgs) :

16V

Voltage - Rated DC :

55V

Transistor Element Material :

SILICON

Current Rating :

30A

Turn On Delay Time :

8.9 ns

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Threshold Voltage :

2V

FET Type :

N-Channel

Rise Time :

100ns

Number of Terminations :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Power Dissipation-Max :

68W Tc

Contact Plating :

Tin

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

35m Ω @ 16A, 10V

Vgs (Max) :

±16V

Series :

HEXFET®

Mount :

Through Hole

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Peak Reflow Temperature (Cel) :

250

Radiation Hardening :

No

Length :

10.5156mm