IRLZ34NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

35mOhm

Published :

1997

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Power Dissipation-Max :

68W Tc

Power Dissipation :

56W

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Number of Elements :

1

FET Type :

N-Channel

Transistor Element Material :

SILICON

Turn On Delay Time :

8.9 ns

Number of Terminations :

3

Lead Pitch :

2.54mm

Rds On (Max) @ Id, Vgs :

35m Ω @ 16A, 10V

Mount :

Through Hole

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

ECCN Code :

EAR99

Vgs (Max) :

±16V

Current Rating :

30A

Rise Time :

100ns

Package / Case :

TO-220-3

Width :

4.69mm

Factory Lead Time :

12 Weeks

Recovery Time :

110 ns

Peak Reflow Temperature (Cel) :

250

Nominal Vgs :

2 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Case Connection :

DRAIN

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Through Hole

Radiation Hardening :

No

Voltage - Rated DC :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.5156mm

Threshold Voltage :

2V

Gate to Source Voltage (Vgs) :

16V

Dual Supply Voltage :

55V

Height :

8.77mm

Turn-Off Delay Time :

21 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Number of Pins :

3

Fall Time (Typ) :

29 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Continuous Drain Current (ID) :

30A