IRL80HS120
- Mfr.Part #
- IRL80HS120
- Manufacturer
- Infineon Technologies
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 12.5A 6PQFN
- Stock
- 4,000
- In Stock :
- 4,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Package / Case :
- 6-VDFN Exposed Pad
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 7.5A, 10V
- Drain to Source Voltage (Vdss) :
- 80V
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2V @ 10µA
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 4.5V
- Power Dissipation-Max :
- 11.5W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 18 Weeks
- Datasheets
- IRL80HS120

N-Channel Tape & Reel (TR) 32m Ω @ 7.5A, 10V ±20V 540pF @ 25V 7nC @ 4.5V 80V 6-VDFN Exposed Pad
IRL80HS120 Description
The Infineon Technologies IRL80HS120 is a low VGS logic level MOSFET that is ideal for wireless charging, telecom, and adaptor applications.
IRL80HS120 Features
-
Reduced parts count wherever 5V supplies are available
-
Driven directly from microcontrollers (slow switching)
-
Higher power density designs
-
Higher switching frequency
-
Uses OptiMOSTM5 Chip
-
System cost reductions
IRL80HS120 Applications
-
Wireless charging
-
Adapter
-
Telecom
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