IRL8113

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Vgs(th) (Max) @ Id :

2.25V @ 250μA

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.006Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

220 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

420A

Case Connection :

DRAIN

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

42A

Series :

HEXFET®

Published :

2004

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

110W Tc

Surface Mount :

yes

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 15V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6m Ω @ 21A, 10V

Terminal Form :

Gull wing

Number of Elements :

1