IRL7486MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

209A Tc

FET Type :

N-Channel

Height :

700μm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

40V

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Package / Case :

DirectFET™ Isometric ME

Series :

HEXFET®, StrongIRFET™

REACH SVHC :

Unknown

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

1.8V

Power Dissipation-Max :

104W Tc

Input Capacitance (Ciss) (Max) @ Vds :

6904pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.25m Ω @ 123A, 10V

Avalanche Energy Rating (Eas) :

190 mJ

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2013

Turn-Off Delay Time :

54 ns

Transistor Element Material :

SILICON

JESD-30 Code :

R-XBCC-N6

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Length :

6.35mm

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Width :

5.05mm

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

111nC @ 4.5V

Terminal Form :

NO LEAD

Pulsed Drain Current-Max (IDM) :

836A

Continuous Drain Current (ID) :

209A

Number of Elements :

1

ECCN Code :

EAR99

Number of Pins :

2

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Turn On Delay Time :

35 ns