IRL7833STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.668mm

Min Operating Temperature :

-55°C

Resistance :

3.8mOhm

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

4170pF @ 15V

Width :

9.65mm

FET Type :

N-Channel

Element Configuration :

Single

Input Capacitance :

4.17nF

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

6.9 ns

Supplier Device Package :

D2PAK

Rds On Max :

3.8 mΩ

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Nominal Vgs :

2.3 V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Published :

2004

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

140W Tc

Vgs (Max) :

±20V

Height :

4.826mm

Mount :

Surface Mount

Turn On Delay Time :

18 ns

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Number of Pins :

3

Max Operating Temperature :

175°C

Series :

HEXFET®

Continuous Drain Current (ID) :

150A

Turn-Off Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

3.8mOhm @ 38A, 10V

Power Dissipation :

140W

Drain to Source Resistance :

3.8mOhm

Rise Time :

50ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount