IRL6342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

79A

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Resistance :

14.6mOhm

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 9.9A, 4.5V

Transistor Application :

SWITCHING

Threshold Voltage :

1.1V

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Fall Time (Typ) :

14 ns

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1025pF @ 25V

Mount :

Surface Mount

Turn-Off Delay Time :

33 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Series :

HEXFET®

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

6 ns

Rise Time :

12ns

Packaging :

Tape and Reel (TR)

Published :

2011

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Nominal Vgs :

1.1 V

Vgs (Max) :

±12V

Number of Terminations :

8

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

9.9A

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta