IRL6342PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Length :

5mm

Height :

1.75mm

Number of Pins :

8

Fall Time (Typ) :

14 ns

Number of Terminations :

8

Packaging :

Tube

Mounting Type :

Surface Mount

FET Type :

N-Channel

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1025pF @ 25V

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Rise Time :

12ns

Published :

2003

Pulsed Drain Current-Max (IDM) :

79A

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 9.9A, 4.5V

Turn-Off Delay Time :

33 ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta

Vgs (Max) :

±12V

Series :

HEXFET®

Threshold Voltage :

1.1V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Mount :

Surface Mount

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Width :

4mm

Element Configuration :

Single

Turn On Delay Time :

6 ns

Power Dissipation-Max :

2.5W Ta

Recovery Time :

20 ns

Continuous Drain Current (ID) :

9.9A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Additional Feature :

High Reliability

Nominal Vgs :

1.1 V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)