IRL3803STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.668mm

Recovery Time :

180 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

16V

Drain to Source Breakdown Voltage :

30V

Series :

HEXFET®

Terminal Form :

Gull wing

Vgs (Max) :

±16V

Resistance :

6mOhm

Rds On (Max) @ Id, Vgs :

6m Ω @ 71A, 10V

JESD-609 Code :

e3

Voltage - Rated DC :

30V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Threshold Voltage :

1V

Dual Supply Voltage :

30V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

140A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

Pulsed Drain Current-Max (IDM) :

470A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Turn-Off Delay Time :

29 ns

Published :

2002

Transistor Application :

SWITCHING

Number of Pins :

3

Current Rating :

140A

Mounting Type :

Surface Mount

Height :

4.826mm

Rise Time :

230ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

1 V

Fall Time (Typ) :

35 ns

Radiation Hardening :

No

Termination :

SMD/SMT

Lead Free :

Contains Lead, Lead Free

Turn On Delay Time :

14 ns

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Number of Elements :

1

Number of Terminations :

2

Power Dissipation :

200W

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.8W Ta 200W Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

Peak Reflow Temperature (Cel) :

260