IRL3803

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

610 mJ

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-220-3

Number of Elements :

1

Mounting Type :

Through Hole

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

470A

Drain-source On Resistance-Max :

0.006Ohm

DS Breakdown Voltage-Min :

30V

Series :

HEXFET®

Qualification Status :

Not Qualified

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE, FAST SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

120A

Rds On (Max) @ Id, Vgs :

6m Ω @ 71A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Transistor Element Material :

SILICON

Power Dissipation-Max :

200W Tc

Terminal Position :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±16V

FET Type :

N-Channel

Case Connection :

DRAIN

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

140A Tc