IRL3716LPBF
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- Mfr.Part #
- IRL3716LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 180A TO262
- Stock
- 5,773
- In Stock ：
- 5,773
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 210W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 180A
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drain to Source Breakdown Voltage :
- 20V
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 5090pF @ 10V
- Max Operating Temperature :
- 175°C
- Mounting Type :
- Through Hole
- Power Dissipation :
- 210W
- Published :
- 2004
- Fall Time (Typ) :
- 36 ns
- Input Capacitance :
- 5.09nF
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 4 mΩ
- Turn-Off Delay Time :
- 38 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 4mOhm @ 90A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- 180A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Series :
- HEXFET®
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Supplier Device Package :
- TO-262
- Gate Charge (Qg) (Max) @ Vgs :
- 79nC @ 4.5V
- Voltage - Rated DC :
- 20V
- Drain to Source Resistance :
- 4.8mOhm
- Rise Time :
- 140ns
- Datasheets
- IRL3716LPBF
N-Channel Tube 4mOhm @ 90A, 10V ±20V 5090pF @ 10V 79nC @ 4.5V 20V TO-262-3 Long Leads, I2Pak, TO-262AA
IRL3716LPBF Overview
The maximum input capacitance of this device is 5090pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 180A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 4.8mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRL3716LPBF Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 4.8mOhm
a 20V drain to source voltage (Vdss)
IRL3716LPBF Applications
There are a lot of Infineon Technologies
IRL3716LPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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