IRL3705ZPBF
- Mfr.Part #
- IRL3705ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO220AB
- Stock
- 83,948
- In Stock :
- 83,948
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.82mm
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Recovery Time :
- 24 ns
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Nominal Vgs :
- 3 V
- Gate to Source Voltage (Vgs) :
- 16V
- Turn-Off Delay Time :
- 26 ns
- FET Type :
- N-Channel
- Published :
- 2004
- Power Dissipation :
- 130W
- Dual Supply Voltage :
- 55V
- Drain to Source Voltage (Vdss) :
- 55V
- Vgs (Max) :
- ±16V
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Threshold Voltage :
- 3V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Input Capacitance :
- 2.88nF
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.6426mm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 75A
- Drain to Source Breakdown Voltage :
- 55V
- Drain to Source Resistance :
- 12mOhm
- Current Rating :
- 75A
- Element Configuration :
- Single
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Number of Pins :
- 3
- Rds On Max :
- 8 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2880pF @ 25V
- Fall Time (Typ) :
- 83 ns
- Height :
- 9.017mm
- Turn On Delay Time :
- 17 ns
- Resistance :
- 8mOhm
- Power Dissipation-Max :
- 130W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 5V
- Rise Time :
- 240ns
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 55V
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 8mOhm @ 52A, 10V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Mounting Type :
- Through Hole
- Datasheets
- IRL3705ZPBF

N-Channel Tube 8mOhm @ 52A, 10V ±16V 2880pF @ 25V 60nC @ 5V 55V TO-220-3
IRL3705ZPBF Description
The IRL3705ZPBF is a HEXFET? N-channel Power MOSFET with ultra-low ON-resistance per silicon area thanks to cutting-edge fabrication techniques. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of applications.
IRL3705ZPBF Features
-
Lead-Free
-
Logic Level
-
Fast Switching
-
Ultra Low On-Resistance
-
Advanced Process Technology
-
175°C Operating Temperature
-
Repetitive Avalanche Allowed up to Tjmax
IRL3705ZPBF Applications
-
Industrial
-
Power Management
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