IRL3705NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Published :

2004

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

89A

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

3.8W Ta 170W Tc

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

310A

DS Breakdown Voltage-Min :

55V

Drain-source On Resistance-Max :

0.012Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Terminal Position :

Single

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

89A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Rds On (Max) @ Id, Vgs :

10m Ω @ 46A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

2

Terminal Form :

Gull wing

Surface Mount :

yes

Reach Compliance Code :

not_compliant

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

340 mJ

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

55V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 5V