IRL3705NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

340 mJ

DS Breakdown Voltage-Min :

55V

Rds On (Max) @ Id, Vgs :

10m Ω @ 46A, 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

2V @ 250μA

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.012Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Power Dissipation-Max :

3.8W Ta 170W Tc

Drain Current-Max (Abs) (ID) :

89A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

89A Tc

Published :

1998

JESD-609 Code :

e0

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

Surface Mount :

yes

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

225

Pulsed Drain Current-Max (IDM) :

310A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 5V

Terminal Position :

Single

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB