IRL3502SPBF
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- Mfr.Part #
- IRL3502SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 110A D2PAK
- Stock
- 2,313
- In Stock ：
- 2,313
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Drain to Source Resistance :
- 7mOhm
- Lead Free :
- Lead Free
- Height :
- 4.83mm
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±10V
- Gate to Source Voltage (Vgs) :
- 10V
- Supplier Device Package :
- D2PAK
- Rds On Max :
- 7 mΩ
- Turn On Delay Time :
- 10 ns
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 96 ns
- RoHS Status :
- RoHS Compliant
- Width :
- 9.65mm
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 4.5V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 110A
- Rds On (Max) @ Id, Vgs :
- 7mOhm @ 64A, 7V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 7V
- Length :
- 10.67mm
- Drain to Source Voltage (Vdss) :
- 20V
- Current Rating :
- 110A
- Fall Time (Typ) :
- 130 ns
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 15V
- Input Capacitance :
- 4.7nF
- Packaging :
- Tube
- Published :
- 2003
- Power Dissipation-Max :
- 140W Tc
- Series :
- HEXFET®
- Number of Pins :
- 3
- Rise Time :
- 140ns
- Power Dissipation :
- 140W
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRL3502SPBF
N-Channel Tube 7mOhm @ 64A, 7V ±10V 4700pF @ 15V 110nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3502SPBF Overview
The maximum input capacitance of this device is 4700pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 110A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 96 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 7mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 7V), this device helps reduce its power consumption.
IRL3502SPBF Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 96 ns
single MOSFETs transistor is 7mOhm
a 20V drain to source voltage (Vdss)
IRL3502SPBF Applications
There are a lot of Infineon Technologies
IRL3502SPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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