IRL3303PBF
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- Mfr.Part #
- IRL3303PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 38A TO220AB
- Stock
- 21,249
- In Stock ：
- 21,249
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 68W Tc
- Width :
- 4.69mm
- Lead Free :
- Lead Free
- Current Rating :
- 34A
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Input Capacitance :
- 870pF
- Termination :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 16V
- Drain to Source Voltage (Vdss) :
- 30V
- Published :
- 2003
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 30V
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On Max :
- 26 mΩ
- Height :
- 15.24mm
- Rise Time :
- 200ns
- Lead Pitch :
- 2.54mm
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Series :
- HEXFET®
- Threshold Voltage :
- 1V
- Turn-Off Delay Time :
- 14 ns
- Resistance :
- 26mOhm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 4.5V
- Max Operating Temperature :
- 175°C
- Fall Time (Typ) :
- 36 ns
- Supplier Device Package :
- TO-220AB
- Power Dissipation :
- 56W
- Vgs (Max) :
- ±16V
- Nominal Vgs :
- 1 V
- Drain to Source Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 7.4 ns
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 38A
- Drain to Source Resistance :
- 40mOhm
- Length :
- 10.5156mm
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 20A, 10V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- 30V
- Datasheets
- IRL3303PBF
N-Channel Tube 26mOhm @ 20A, 10V ±16V 870pF @ 25V 26nC @ 4.5V 30V TO-220-3
IRL3303PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 870pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 14 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 40mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRL3303PBF Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 40mOhm
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
IRL3303PBF Applications
There are a lot of Infineon Technologies
IRL3303PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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