IRL3303

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Number of Terminations :

3

DS Breakdown Voltage-Min :

30V

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Surface Mount :

No

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.026ohm

ECCN Code :

EAR99

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

34A

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Published :

1997

JESD-30 Code :

R-PSFM-T3

Series :

HEXFET®

Power Dissipation-Max :

68W Tc

Vgs (Max) :

±16V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

26m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-220-3

Mounting Type :

Through Hole