IRL3302S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Mount :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Number of Elements :

1

JESD-609 Code :

e3

Published :

1998

Voltage - Rated DC :

20V

Terminal Finish :

MATTE TIN OVER NICKEL

Vgs(th) (Max) @ Id :

700mV @ 250μA

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Current Rating :

39A

Series :

HEXFET®

Rise Time :

110ns

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Power Dissipation-Max :

57W Tc

Pulsed Drain Current-Max (IDM) :

160A

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±10V

Avalanche Energy Rating (Eas) :

130 mJ

Number of Terminations :

2

Continuous Drain Current (ID) :

39A

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Rds On (Max) @ Id, Vgs :

20m Ω @ 23A, 7V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.023Ohm

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Mounting Type :

Surface Mount