IRL3103STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Mount :

Surface Mount

Number of Pins :

3

Power Dissipation :

110W

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Height :

4.826mm

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Rise Time :

120ns

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Terminations :

2

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Vgs (Max) :

±16V

Gate to Source Voltage (Vgs) :

16V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Length :

10.668mm

Continuous Drain Current (ID) :

64A

Turn-Off Delay Time :

14 ns

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Current Rating :

64A

Turn On Delay Time :

8.9 ns

Pulsed Drain Current-Max (IDM) :

220A

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Width :

9.65mm

ECCN Code :

EAR99

Power Dissipation-Max :

94W Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

Additional Feature :

AVALANCHE RATED

Resistance :

12mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

9.1 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Lead Free :

Contains Lead

FET Type :

N-Channel

Terminal Form :

Gull wing

Published :

2004