IRL3103STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

130 mJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

Drain Current-Max (Abs) (ID) :

64A

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2001

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

94W Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N-Channel

JESD-609 Code :

e3

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.012Ohm

Pulsed Drain Current-Max (IDM) :

220A

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Case Connection :

DRAIN

Vgs (Max) :

±16V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Series :

HEXFET®