IRL2910STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Drain Current-Max (Abs) (ID) :

55A

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

26m Ω @ 29A, 10V

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Published :

2004

Number of Elements :

1

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

520 mJ

Pulsed Drain Current-Max (IDM) :

190A

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.03Ohm

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount

Number of Terminations :

2