IRL2203NLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

116A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Drain to Source Resistance :

10MOhm

Turn On Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Vgs (Max) :

±16V

Published :

2010

Power Dissipation-Max :

3.8W Ta 180W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Max Operating Temperature :

175°C

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Mount :

Through Hole

Continuous Drain Current (ID) :

116A

Input Capacitance :

3.29nF

Power Dissipation :

170W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

7 mΩ

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Number of Elements :

1

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Rise Time :

160ns

Supplier Device Package :

TO-262

Fall Time (Typ) :

66 ns

Turn-Off Delay Time :

23 ns

Current Rating :

116A

Voltage - Rated DC :

30V

Number of Pins :

3

Radiation Hardening :

No

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

7mOhm @ 60A, 10V

Min Operating Temperature :

-55°C

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA