IRL2910PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Pins :

3

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Rise Time :

100ns

JEDEC-95 Code :

TO-220AB

Power Dissipation :

200W

Contact Plating :

Tin

Lead Pitch :

2.54mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Threshold Voltage :

2V

Width :

4.69mm

Factory Lead Time :

12 Weeks

Nominal Vgs :

2 V

Turn On Delay Time :

11 ns

Radiation Hardening :

No

Voltage - Rated DC :

100V

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

ECCN Code :

EAR99

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

520 mJ

Published :

1998

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Element Configuration :

Single

Turn-Off Delay Time :

49 ns

Length :

10.5156mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

55 ns

Current Rating :

55A

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Continuous Drain Current (ID) :

55A

Lead Free :

Contains Lead, Lead Free

Vgs (Max) :

±16V

Number of Terminations :

3

Package / Case :

TO-220-3

Power Dissipation-Max :

200W Tc

Recovery Time :

350 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Height :

8.77mm

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Termination :

Through Hole

Rds On (Max) @ Id, Vgs :

26m Ω @ 29A, 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

16V

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Packaging :

Tube

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

48A