IRL2703S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

40m Ω @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Number of Elements :

1

Series :

HEXFET®

Terminal Position :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Terminal Form :

Gull wing

Power Dissipation-Max :

45W Tc

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Number of Terminations :

2

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Vgs (Max) :

±16V

Published :

1996

Vgs(th) (Max) @ Id :

1V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

96A

Avalanche Energy Rating (Eas) :

77 mJ

Terminal Finish :

MATTE TIN OVER NICKEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.04Ohm

Transistor Element Material :

SILICON

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

24A

JESD-30 Code :

R-PSSO-G2